[12] Patent
[11] Patent No.:GC0004519  
[45] Date of Publishing the Grant of the Patent: 31/Dec /2016                32/2016  
Number of the Decision to Grant the Patent:2016/89527
Date of the Decision to Grant the Patent:14/Dec/2016

[21] Application No.:GC 2010-16734

[22] Filing Date:21/9/2010

[30] Priority:

[33] State [32] Priority date [31] Priority No.
DE
24/9/2009
102009044991.4

[72] Inventor: Dr. Mikhail Sofin

[73] Owner: Wacker Chemie AG , Hanns-Seidel-Platz 4, 81737, Munchen, Germany

[74] Agent: Dennemeyer & Associates

  

 

  

[51]IPC:
Int. Cl.: C23C 16/24, 16/56 (2006.01)

[56] Cited Documents:

- DE 10 2007 047210 A1 ( WACKER CHEMIE AG [DE]) 09 April 2009
- EP 0 329 163 A2 (UNION CARBIDE CORP [US] ADVANCED SLICON MATERIALS INC [US]) 23 August 1989
- EP 1 391 252 A1 (HEMLOCK SEMICONDUCTOR CORP [US]) 25 February 2004
 
Examiner: Saja Mohammed AlHassan

[54] ROD-TYPE POLYSILICON HAVING IMPROVED BREAKING PROPERTIES
[57] Abstract: The present invention relates to rod-type, polycrystalline silicon having a rod diameter of >100 mm, obtained by deposition of silicon-containing gas according to the Siemens method, wherein the Si rods are brought into contact with hydrogen at the end of the deposition process during cooling in the reactor, and the cooled Si rods obtained have in perpendicular cross section cracks and/or radial stresses having a defined size.
No. of claims: 5


 

Note: Any interested individual may, within 3 months of publication of the grant, file objection thereof with the Grievance Committee after payment of grievance fees.