[12] Patent
[11] Patent No.:GC0007559  
[45] Date of Publishing the Grant of the Patent: 30/Apr /2018                48/2018  
Number of the Decision to Grant the Patent:2018/125984
Date of the Decision to Grant the Patent:12/Apr/2018

[21] Application No.:GC 2011-19164

[22] Filing Date:24/8/2011

[30] Priority:

[33] State [32] Priority date [31] Priority No.
DE
25/8/2010
102010039752.0

[72] Inventors:1- Reiner Pech،2- Erich Dornberger

[73] Owner: Wacker Chemie AG, Hanns-Seidel- Platz 81737 , Munchen, Germany

[74] Agent: Dennemeyer & Associates

  

 

  

[51]IPC:
Int. Cl.: C30B 29/06, C03B 4/00 (2006.01)

[56] Cited Documents:

-EP 1338682 A2 (HEMLOCK SEMICONDUCTOR CORP) 27 August 2003  
Examiner: Nouf AlNassban

[54] POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCTION THEREOF
[57] Abstract: The present invention relates inter alia to polycrystalline silicon containing polycrystalline silicon fragments, at least 90% of the•fragments having a size from 10 to 40 mm, characterized by silicon dust particle contents of less than 15 ppmw for particle sizes of less than 400 ?m, less than 14 ppmw for particle sizes of less than 50 ?m, less than 10 ppmw for particle sizes of less than 10 ?m and less than 3 ppmw for particle sizes of less than 1 ?m, and furthermore characterized by surface metal impurities greater than or equal to 0.1 ppbw and less than or equal to 100 ppbw. The invention furthermore relates to a method for the production of polycrystalline silicon, comprising fracture of polycrystalline silicon deposited on thin rods in a Siemens reactor into fragments, sorting of the fragments into size classes of from about 0.5 mm to more than 45 mm, and treatment of the silicon fragments by means of compressed air or dry ice in order to remove silicon dust from the fragments, no wet chemical cleaning of the fragments being carried out.
No. of claims: 10


 

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