[12] Patent
[11] Patent No.:GC0004582  
[45] Date of Publishing the Grant of the Patent: 31/Dec /2016                32/2016  
Number of the Decision to Grant the Patent:2016/90300
Date of the Decision to Grant the Patent:28/Dec/2016

[21] Application No.:GC 2013-23378

[22] Filing Date:21/1/2013

[30] Priority:

[33] State [32] Priority date [31] Priority No.

[72] Inventors:1- Dr. Hanns WochnerĜŒ2- Dr. Robert Baumann

[73] Owner: Wacker Chemie AG, Hanns-Seidel-Platz 4, 81737, Munchen, Germany

[74] Agent: Dennemeyer & Associates




C23C16/24; C30B13/00; G01J3/28; G01N21/64

[56] Cited Documents:

-Measurement of Carbon Concentration in Polycrystalline Silicon Using FTIR Abstract, Lydia L. Hwang, John Bucci, and Jomes R. McCormick, J. Electrochem. Soc., Vol. 138, No. 2, February 1991
-US 2009311161 A1 [CT THERM SITEC GMBH [DE]], 17 December 2009
Examiner: Eng. Yusuf AlRaqabi

[57] Abstract: The invention provides a process for determining surface contamination of polycrystalline silicon, comprising the steps ofa) providing two polycrystalline silicon rods by deposition in a Siemens reactor;b) determining contaminants in the first of the two rods immediately after the deposition;c) conducting the second rod through one or more systems in which polycrystalline silicon rods are processed further to give rod pieces or polysilicon fragments, optionally cleaned, stored or packed;d) then determining contaminants in the second rod;wherein the difference in the contaminants determined in the first and second rods gives surface contamination of polycrystalline silicon resulting from systems and the system environment.
No. of claims: 4


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